About the role
AI summarisedJoin a cutting-edge project focused on the Electrical Characterization and Modeling of 3D NAND Memory Cells. This role applies advanced data analytics to optimize device performance, reliability, and learning workflows in next-generation NAND technology.
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Key Responsibilities
- Perform electrical evaluation of 3D NAND memory cells, including program, read, and erase behavior.
- Conduct reliability characterization such as endurance cycling and data retention analysis.
- Apply statistical and exploratory data analysis to large-scale measurement datasets to identify trends and performance drivers.
- Develop data-driven and physics-informed NAND device models in collaboration with device engineers.
- Utilize automation, scripting, and visualization tools to improve analysis efficiency and shorten learning cycles.
Requirements
- Pursuing MS or PhD in Electrical Engineering, Computer Science, Data Science, Physics, or a related field.
- Knowledge of semiconductor devices characterization or processes development projects is required.
- Solid communication and reporting abilities are necessary.