About the role
AI summarisedThis internship at Micron's Technology Development organization focuses on advancing 3D Electron Tomography techniques for nanoscale characterization of emerging memory technologies. The intern will collaborate with cross-functional teams to develop TEM workflows, prepare samples using FIB, and analyze tomographic data.
IDMFull-timeSTPG
Key Responsibilities
- Hands-on experience preparing 3D NAND samples using Focused Ion Beam (FIB) techniques.
- Execution of 3D Electron Tomography experiments using TEM/STEM/EFTEM.
- Exposure to tilt-series acquisition, 3D reconstruction, and interpretation of tomographic data.
- Direct collaboration with cross-functional engineering teams (process integration, device engineering, reliability).
- Experience documenting technical findings and presenting results in professional engineering settings.
- Insight into real-world applications of advanced microscopy in semiconductor R&D.
- Development and optimization of 3D tomography workflows for next-generation memory nodes.
- High-quality tomographic datasets and reconstructed 3D models that enhance device understanding.
- Technical reports summarizing methodology, findings, and recommendations for adoption into TD workflows.
Requirements
- Currently pursuing a PhD in Materials Science and Engineering, Applied Physics, or a related discipline.
- Basic understanding of semiconductor device physics and materials characterization.
- Hands-on experience with TEM systems (e.g., Nion, TFS, JEOL).
- Familiarity with data analysis tools such as DigitalMicrograph, MATLAB, or Python.
- Experience with 3D reconstruction software (Avizo, IMOD, TomoJ, Inspect3D) is a plus.
- Strong analytical and problem-solving skills; demonstrated innovation is highly valued.
- Effective communication skills and a collaborative mindset.