About the role
AI summarisedThe Senior Process Engineer will develop and optimize silicon carbide (SiC) crystal growth technologies using Physical Vapor Transport (PVT) to support GaN device production within the NSTIC program.
ResearchOnsiteInstitute of Microelectronics
Key Responsibilities
- Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used in RF and millimeter-wave GaN devices
- Design, execute, and analyze SiC crystal growth experiments using Physical Vapor Transport (PVT) and related techniques
- Characterize SiC crystals and wafers for resistivity, defect density, crystal quality, and uniformity
- Collaborate with device, epitaxy, and integration teams to ensure material performance meets requirements
- Troubleshoot processes and equipment to maintain tool performance and process quality
- Prepare Standard Operating Procedures (SOPs), Out-of-Control Action Plans (OCAPs), SPC, and FMEA documentation
- Manage external vendors for the wafering process to produce SiC wafers from SiC boules
- Ensure PVT tool uptime remains above 90% and provide backup support for equipment maintenance
- Document experimental results and contribute to technical reports, publications, and patents
- Support technology transfer and scale-up activities aligned with NSTIC - GaN program objectives
Requirements
- Bachelor's or Master's degree in Materials Science, Electrical Engineering, Physics, or a related discipline
- 3 - 5 years of hands-on experience in silicon or silicon carbide (SiC) material growth
- Strong background in semiconductor device physics and materials processing
- Excellent communication skills and strong industry awareness
- Proven problem-solving abilities and highly motivated self-starter mentality
- Ability to work independently and collaboratively in a team environment
- Prior industry experience is considered an advantage