About the role
AI summarisedResearch Scientist role at NSTIC focused on RF/mmWave GaN device characterization and modeling. The position involves hands-on automated RF testing, behavioral/empirical/physical model creation, and data analysis to produce EDA-compatible models for GaN power devices.
ResearchOnsiteInstitute of Microelectronics
Key Responsibilities
- Use automation RF tools to test linear and nonlinear characteristics of RF GaN device
- Create the behavioural, empirical or physical models
- Analyse the device characterization data to create the device model compatible with the standard EDA platforms
Requirements
- PhD in Semiconductor Physics, Electrical Engineering or related areas
- In-depth knowledges of III-V based FET model. (e.g., CFET, EEHEMT, Angelov, ASM, etc.) and parameter extraction methodologies
- Good knowledge of RF on-wafer calibration and de-embedding theory and procedures
- Professional hands-on experiences in Maury/Focus load pull system for on-wafer measurement
- Good experience in at least one programming language. (Python/C++/Matlab)
- Team spirit and problem-solving ability
- Excellent verbal and written communication skills
- Good track of scientific publications in international journals and Peer-review conferences