About the role
AI summarisedThis internship focuses on advancing 3D Electron Tomography techniques for nanoscale characterization of emerging memory technologies at Micron's Technology Development organization. The intern will work with TEM and FIB systems to prepare samples, acquire data, and reconstruct 3D models to support next-generation memory product development. Collaboration with process engineers and integration teams is central to the role.
IDMOnsiteSTPG
Key Responsibilities
- Prepare 3D NAND samples using Focused Ion Beam (FIB) techniques
- Execute 3D Electron Tomography experiments using TEM/STEM/EFTEM
- Perform tilt-series acquisition and 3D reconstruction of tomographic data
- Interpret tomographic data for structural and compositional analysis
- Collaborate with cross-functional engineering teams including process integration, device engineering, and reliability
- Document technical findings and present results in professional engineering settings
- Develop and optimize 3D tomography workflows for next-generation memory nodes
- Generate high-quality tomographic datasets and reconstructed 3D models
- Produce technical reports summarizing methodology, findings, and recommendations for adoption into TD workflows
Requirements
- Currently pursuing a PhD in Materials Science and Engineering, Applied Physics, or a related discipline
- Basic understanding of semiconductor device physics and materials characterization
- Hands-on experience with TEM systems (e.g., Nion, TFS, JEOL)
- Familiarity with data analysis tools such as DigitalMicrograph, MATLAB, or Python
- Experience with 3D reconstruction software (Avizo, IMOD, TomoJ, Inspect3D) is a plus
- Strong analytical and problem-solving skills; demonstrated innovation is highly valued
- Effective communication skills and a collaborative mindset