About the role
AI summarisedJoin A*STAR Institute of Microelectronics (IME) in an R&D initiative focused on advancing critical process modules for next-generation semiconductor device fabrication, specializing in ion implantation technology. This role integrates process simulation, experimental execution, and advanced materials characterization to develop robust and scalable ion implantation solutions.
ResearchOnsiteInstitute of Microelectronics
Key Responsibilities
- Support the development and validation of ion implantation recipes to achieve targeted dopant profiles while minimizing lattice damage.
- Perform quantitative analysis of SIMS depth profiles, sheet-resistance (Rs) measurements, and RBS/channeling data to correlate process conditions.
- Optimize post-implant annealing conditions to maximize electrical dopant activation while minimizing residual lattice damage.
- Analyze implant-induced defects using experimental data and simulations and contribute to strategies for defect suppression and recovery.
- Design and execute ion-implantation experiments with systematic variation of dose, energy, tilt, and rotation to improve device performance.
- Review work orders and support equipment operators in resolving process-related issues.
Requirements
- Bachelor's or Master's degree in Electrical Engineering, Materials Science, Physics, or a related field.
- Basic understanding of solid-state physics, including ion implantation processes and dopant activation.
- Familiarity with defect formation and recovery in semiconductors.
- Experience or academic exposure to process characterization and data analysis (SIMS, Rs, RBS/channeling).