About the role
AI summarisedThis internship focuses on the electrical characterization and modeling of 3D NAND memory cells to support device optimization and reliability improvement. The intern will leverage advanced data analytics, statistical modeling, and automation tools to analyze large datasets and develop physics-informed device models.
IDMOnsiteSTPG
Key Responsibilities
- Perform electrical evaluation of 3D NAND memory cells, including program, read, and erase behavior.
- Conduct reliability characterization such as endurance cycling and data retention analysis.
- Apply statistical and exploratory data analysis to large-scale measurement datasets to identify trends, correlations, and performance drivers.
- Develop data-driven and physics-informed NAND device models, working closely with device engineers and mentors.
- Utilize automation, scripting, and visualization tools to improve analysis efficiency and shorten learning cycles.
- Collaborate with cross-functional engineers and contribute to real device learning in advanced NAND technology nodes.
- Produce characterization reports on 3D NAND cell performance and reliability behavior.
Requirements
- Candidate must be pursuing MS or PhD in Electrical Engineering, Computer Science, Data Science, Physics, or a related field.
- Knowledge of and experience of semiconductor devices characterization or/and processes development projects.
- Knowledge of and experience with nonvolatile memories is preferred.
- Familiarity with basic data analysis or scripting tools (e.g., Python, JSL, MATLAB) is a plus.
- Solid communication and reporting abilities.