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Jobfoundry
A*STAR

Research Scientist (RF/mmWave GaN device large-signal characterization and modeling). IME

A*STAR
ResearchSingaporeOnsitePosted 3 weeks ago
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About the role

AI summarised

The National Semiconductor Translation and Innovation Centre (NSTIC) (GaN) seeks a Research Scientist proficient in using automation RF tools to test linear and nonlinear characteristics of RF GaN devices and develop corresponding behavioral, empirical, or physical models.

ResearchOnsiteInstitute of Microelectronics

Key Responsibilities

  • Test linear and nonlinear characteristics of RF GaN devices using automation RF tools.
  • Develop behavioral, empirical, or physical models for the characterized RF GaN devices.
  • Apply systematic approaches to analyze device characterization data for model creation compatible with standard EDA platforms.

Requirements

  • PhD in Semiconductor Physics, Electrical Engineering, or a related field.
  • In-depth knowledge of III-V based FET models (e.g., CFET, EEHEMT, Angelov, ASM) and parameter extraction methodologies.
  • Proficiency in RF power device testing using automation setups.
  • Good knowledge of RF on-wafer calibration and de-embedding theory and procedures.
  • Hands-on experience with Maury/Focus load pull systems for on-wafer measurement.
  • Proficiency in at least one programming language (Python, C++, or Matlab).
  • Strong problem-solving ability and team spirit.
  • Excellent verbal and written communication skills.
  • Track record of scientific publications in international journals and Peer-review conferences.