About the role

AI summarised

The Sr. Engineer, NAND Cell Integration role at Micron focuses on advancing NAND device technology through process development, data analysis, and cross-functional collaboration. The position involves driving innovation to meet performance and reliability specifications, supporting technology transfer from R&D to manufacturing, and contributing to product qualification. The ideal candidate has a strong background in semiconductor physics, NAND memory, and research, with proven skills in data analysis, project management, and teamwork.

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Key Responsibilities

Extract and analyze inline, probe, parametric and reliability data for thorough data analysis
Drive cross-functional teams to address device/array deficiencies (design/process/deviceteams)
Provide regular updates to global cell team and management team on project status and outlook, with clear summary of complex problems, actions taken to address them and timeline of deliverables

Requirements

Masters in Electrical Engineering, Physics and Nanoscience or a related field
Ability to understand the NAND cell operation, reliability and performance requirements while contributing to new product qualifications
In-depth knowledge on semiconductor process flow (preferably nonvolatile memories) with good material and structural understanding is desirable
A strong aptitude for research, demonstrated through publications and patents, is essential
Exposure to R&D and transfer / manufacturing is preferred
Highly self-motivated, self-governing with proven ability to work in a demanding & dynamic environment
Ability to effectively coordinate with cross-functional teams to meet NAND cell requirements
Solid data analysis capability, communication and presentation skills
Occasional travel to US for new technology and skill-set development