About the role
AI summarisedInternship focused on electrical characterization and modeling of 3D NAND memory cells at Micron Technology, a semiconductor company. The intern will perform electrical evaluation, reliability characterization, statistical data analysis, and develop data-driven device models using automation and scripting tools.
IDMFull-timeSTPG
Key Responsibilities
- Perform electrical evaluation of 3D NAND memory cells, including program, read, and erase behavior.
- Conduct reliability characterization such as endurance cycling and data retention analysis.
- Apply statistical and exploratory data analysis to large-scale measurement datasets to identify trends, correlations, and performance drivers.
- Develop data-driven and physics-informed NAND device models, working closely with device engineers and mentors to translate data insights into physical understanding.
- Utilize automation, scripting, and visualization tools to improve analysis efficiency and shorten learning cycles.
- Electrical characterization of 3D NAND cell performance and reliability metrics.
- Statistical analysis and visualization of large electrical measurement datasets.
- Exploration of AI / data analytics techniques to enhance device learning.
- Development and refinement of data-driven and physics-based device models.
- Automation of analysis workflows using scripting and visualization tools.
Requirements
- The knowledge of and experience of semiconductor devices characterization or/and processes development projects.
- The knowledge of and experience with nonvolatile memories is preferred.
- Familiarity with basic data analysis or scripting tools (e.g., Python, JSL, MATLAB) is a plus.
- Solid communication and reporting abilities.
- Candidate must be pursuing MS or PhD in Electrical Engineering, Computer Science, Data Science, Physics, or a related field.