About the role
AI summarisedJoin our SiC crystal growth team to play a crucial role in developing advanced crystal growth technologies for semi-insulating SiC wafers, which serve as critical substrates for high-frequency RF and millimeter-wave GaN devices within the NSTIC – GaN program.
ResearchOnsiteInstitute of Microelectronics
Key Responsibilities
- Lead and manage SiC crystal growth projects, including planning, execution, and reporting.
- Develop and optimize crystal growth technologies for semi-insulating SiC wafers using Physical Vapor Transport (PVT).
- Design, execute, and analyze SiC crystal growth experiments using PVT and related techniques.
- Develop physics-based, data-driven, and digital twin models to enhance growth rate, resistivity control, and wafer uniformity.
- Apply AI/ML methods and materials simulations to optimize crystal growth processes and predict material properties.
- Characterize SiC crystals and wafers regarding resistivity, defect density, crystal quality, and uniformity.
- Collaborate with device, epitaxy, and integration teams to ensure material performance meets device requirements.
- Troubleshoot processes and equipment, preparing technical documentation such as SOPs, OCAPs, FMEA, and SPC.
- Guide equipment engineers in maintaining PVT and supporting tools to achieve high uptime.
Requirements
- PhD in Materials Science, Electrical Engineering, Physics, or a related discipline.
- 3 - 5 years of hands-on experience in SiC crystal growth using the Physical Vapor Transport (PVT) method.
- Experience with chamber-scale simulations for Physical Vapor Transport (PVT) processes.
- Strong background in SiC materials science and characterization of SiC wafers.
- Excellent communication skills, strong industry awareness, and proven problem-solving abilities.
- Highly motivated self-starter capable of working independently and collaboratively in a team environment.