About the role
AI summarisedWe are seeking a talented and passionate Senior Process Engineer to join our silicon carbide (SiC) crystal growth team. The successful candidate will be responsible for developing crystal growth technologies, operating crystal growth tools, and supporting the production of semi-insulating SiC wafers used as substrates for RF and millimeter-wave GaN devices within the NSTIC - GaN program.
ResearchOnsiteInstitute of Microelectronics
Key Responsibilities
- Develop and optimize crystal growth technologies for semi-insulating silicon carbide (SiC) wafers used as substrates for RF and millimeter-wave GaN devices.
- Design, execute, and analyze SiC crystal growth experiments using Physical Vapor Transport (PVT) and related growth techniques.
- Characterize SiC crystals and wafers, including resistivity, defect density, crystal quality, and uniformity.
- Collaborate with device, epitaxy, and integration teams to ensure material performance meets device requirements.
- Troubleshoot processes and equipment to maintain tool performance and process quality, preparing SOPs, OCAPs, SPC, and FMEA.
- Work with external vendors to control the wafering process and produce SiC wafers from SiC boules.
- Collaborate with equipment engineers to maintain PVT and supporting tools, ensuring tool uptime above 90%.
- Document experimental results, prepare technical reports, and contribute to publications and patents.
- Prepare and deliver technical presentations for internal reviews, conferences, and journals.
Requirements
- Bachelor's or Master's degree in Materials Science, Electrical Engineering, Physics, or a related discipline.
- 3 - 5 years of hands-on experience in silicon or silicon carbide (SiC) material growth.
- Strong background in semiconductor device physics and materials processing.
- Excellent communication skills, strong industry awareness, and proven problem-solving abilities.
- Highly motivated self-starter with the ability to work independently and collaboratively in a team environment.