About the role
AI summarisedThis internship focuses on process development for NAND memory technology, specifically targeting reduction in cell film variation for advanced technology nodes. The intern will engage in hands-on learning of key deposition and treatment processes for NAND memory cells, conduct evaluations to address top film variation metrics, and apply characterization techniques such as SEM, TEM, XRD, and photoluminescence. The role is designed for PhD candidates with strong backgrounds in materials science, solid-state physics, and related disciplines.
IDMOnsiteSTPG
Key Responsibilities
- Define and run evaluations to close the gaps for top 3 films variation metrics
- Quantify and set targets for Tech Node cell films variation
Requirements
- PhD candidate in Materials chemistry (Silicon oxides and metal oxides dielectrics) or solid state transistor physics
- Experience with characterization techniques: SEM, TEM, XRD, Photoluminescence
- Coursework or interest in Material science, nanomaterials, chemical engineering, chemistry, physics, physical chemistry, or transistor physics
- Availability for 4-6 months (minimum 4 months for full-time internship)